interface state造句
例句与造句
- Gets the user interface state of the element
获取元素的用户界面ui状态。 - Specifies the user interface state of a element within a
控件内某元素的用户界面( ui )状态。 - Influences of collision angle on the interface state of explosive compound materials
碰撞角对爆炸复合材料界面状态的影响 - Gets or sets a value indicating whether the band is in a selected user interface state
获取或设置一个值，该值指示带区是否为被选定。 （从 - It is assumed that electron tunneling from silicon into oxide and buildup of interface states are the post - irradiation recovery
假设隧道电子从硅进入氧化层和界面态的建立是辐射效应的恢复机理。 - It's difficult to find interface state in a sentence. 用interface state造句挺难的
- In the experiment of photo - excited c - v characteristics of sio2 / n - sic , a ledge that had been appeared in p - type sample was observed because of the deep interface states
然后使用光照条件讨论了p和n型sicmos的界面态的性质，即p型为施主态， n型为受主态。 - It shows that the bias in the post - irradiation recovery period and the ratio of the interface state to the electron tunneling influence the recovery rate
模拟结果表明：退火过程所加栅偏压的大小以及隧道电子效应与建立的界面态所占比例的不同影响器件的恢复率。 - The electrical parameters of buried oxide and interface state in soi structures influence the performance , reliability and the radiation hardness of devices fabricated in the superficial silicon film
完成了存储阵列，控制电路，外围电路的时序设计，原理图设计，版图设计，并且通过了drc ， lvs检查。 - A model of the sic pn junctions irradiated by neutron is presented . the effects of radiation induced oxide trapped charge and sic / si02 interface state density on inversion layer mobility is studied systematically
在辐照的电离效应方面，研究了辐照在sicmos氧化层中引入的陷阱电荷对mos沟道反型层迁移率的影响。 - In the high frequency c - v experiments , the large flat - band shift in sio2 / p - sic indicated that there was high density of deep interface states . the deep interface states were simply studied by using photo excitation
在无光照条件下，比较了n型和p型sicmos的不同特点，对其深耗尽特征和p型sicmos的平带电压作了讨论和解释。 - Standard test method for separating an ionizing radiation - induced mosfet threshold voltage shift into components due to oxide trapped holes and interface states using the subthreshold current - voltage characteristics
利用亚阈值安伏特性测定由于氧化空穴和界面态产生的电离辐射感应金属氧化物半导体场效应晶体管阈电压偏移分量的标准试验方法 - The study shows that interface state charges not only increase the threshold voltage , but also lower the mosfet transconductance , drain current and field - effect mobility , which can well explain the results of experiment
分析结果显示界面态电荷不仅使阈值电压增大，而且还会导致器件漏电流减小，跨导和场效应迁移率降低，模拟结果能对实验现象做出很好的解释。 - The effect of interface state charges on the threshold voltage , drain current , transconductance and field - effect mobility of n - channel sic mosfet is analyzed with numerical method by establishing the model of the interface state density exponential distribution
建立界面态密度的指数分布模型，用数值方法较为详细的分析了界面态电荷对n沟mosfet器件阈值，漏电流，跨导和场效应迁移率的影响。 - It is pointed that inversion - layer mobility is different from field - effect mobility for sic mosfet . and a relationship has been established between the ratio of the experimentally - determined field - effect mobility to the actual inversion - layer carrier mobility and interface states
明确指出碳化硅器件的反型层迁移率和实验测定的场效应迁移率不能等同，并给出了以上二者的比值与界面态密度的定量关系。 - , magnitude of electric field , distance between poles , area of electric field , the influence to brake torque of conventional interface state and dimension and the like . its actual values has been tested by the heat balance calculations . the er
讨论分析了电流变液的种类、电场的大小、电极间的距离及电场的面积(改变制动器的直径及宽度) 、传动系统界面状态及尺寸等参数对制动力矩的影响，通过对制动器的热平衡分析计算验证其具有实用价值。
更多例句： 下一页